Summary: Hexagonal boron nitride (h-BN) and its HDMI Video Connecting Cable heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction.However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material.Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene.Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed.
Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene.These complex 2D heterostructures exhibit various physical phenomena and could potentially have a Fedoras range of practical applications.